Semiconductor devices and methods of fabricating the same

ABSTRACT

Exposed are a semiconductor device and method of fabricating the same. The device includes an insulation film that is disposed between an active pattern and a substrate, which provides various improvements. This structure enhances the efficiency of high integration and offers an advanced structure for semiconductor devices.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of U.S. patent application Ser. No. 11/633,403, filed on Dec. 4, 2006, which claims the benefit of Korean patent application number 10-2005-0118325, filed on Dec. 6, 2005, in the Korean Intellectual Property Office, the contents of which applications are incorporated herein in their entirety by reference.

BACKGROUND

The subject matter described herein is concerned with semiconductor devices and methods of fabricating the same, and in particular relates to a semiconductor device and method of fabricating the same suitable for high integration density.

Semiconductor memory devices can be roughly classified into volatile and nonvolatile devices. Volatile memories, including, for example, dynamic random access memories (DRAM) and static random access memories (SRAM), lose their data when power supplies are removed. Nonvolatile memories retain their data even without power supplies applied to them. A flash memory device is one type of nonvolatile memory device. The flash memories are becoming important devices for use as storage media since they are able to electrically write and erase data in addition to the data retention capability independent of powering backup.

Generally, the flash memory devices employ electrically isolated floating gates for storing information. A cell of the flash memory device is able to store a data bit that is logically ‘0’ or ‘1’ according to presence of charges in the floating gate. However, as the charges remain as free charges in the floating gate, all of the charges can be lost when there is a defect or damage on a tunnel oxide film under the floating gate. Thus, it could be required to form the tunnel oxide film to a large thickness under the floating gate. Such a thicker tunnel oxide film may increase an operation voltage of the flash memory device, making it difficult to implement high integration density and hence raising the rate of power consumption. There has been proposed a floating-trap nonvolatile memory device for the purpose of overcoming the drawback of the weak tunnel oxide film. The floating-trap nonvolatile memory device uses a charge-trapping insulation film, which has traps with deep potentials, as an information storage member. By placing charges in the deep potentials of the traps, it offers stability in retaining the charges even when the tunnel oxide film is partially damaged.

Recent advancement of device technologies demands higher integration density in morphological dimensions of semiconductor devices. Along with higher density of semiconductor devices, it is possible to enhance the capacity of data storage and to reduce power consumption thereof.

However, there are also generated various problems by the higher integration density. For instance, field effect transistors used as unit elements of the semiconductor devices would be degraded in the characteristic of punch-through because of narrower distances between their source and drain regions.

Further, a unit cell of the DRAM is required to have larger capacitance in a restrictive region and vertically higher storage electrodes, which makes it difficult to carry out photolithography and/or etching processes due to high step differences.

Additionally, as an electrically writable/erasable nonvolatile memory device is also required to have larger storage capacity, more memory cells nee to be integrated in a given area. However, since there is a limit to the minimum line width defined by the photolithography process, it becomes more difficult to implement such a larger-capacity nonvolatile memory device.

Therefore, advanced technologies for solving the various problems associated with higher integration density of semiconductor devices are being studied.

SUMMARY OF THE INVENTION

In one aspect, the present invention is directed to a semiconductor device which includes a dielectric film and an active pattern that are stacked in sequence on a substrate and a gate electrode crossing over the active pattern. A gate insulation film is interposed between the gate electrode and the active pattern, and a pair of impurity layers are formed in the active pattern at both sides of the gate electrode, respectively, and defining a channel region under the gate electrode. The bottoms of the impurity layers contact with the top of the dielectric film. The channel region is a data storage field and the substrate is supplied with a voltage to provide attraction for excessive charges stored in the channel region.

In one embodiment, the semiconductor device further comprises: a field isolation film filling a trench formed in the substrate around the active pattern and covering sidewalls of the dielectric film and the active pattern. The top of the field isolation film is partially leveled lower than the top of the dielectric film and forms the bottom of a recess region, a sidewall of the recess region partially including a sidewall of the active pattern. The dielectric film partially extends along the bottom and sidewall of the recess region.

In one embodiment, the semiconductor device further comprises: an embedded pattern disposed on the extending portion of the dielectric film, filling the recess region.

In one embodiment, the excessive charges are the same polarity as majority carriers of the channel region.

In one embodiment, the dielectric film includes an insulation material higher than silicon oxide in dielectric constant.

According to another aspect, the invention is directed to a semiconductor device which includes an active pattern and a multi-level insulation film that includes a lower charge-trapping film, being stacked on a substrate in sequence, and a gate electrode crossing over the active pattern. A gate insulation film is interposed between the gate electrode and the active pattern, and a pair of impurity layers are formed in the active pattern at both sides of the gate electrode, respectively, and defining a channel region under the gate electrode. The bottoms of the impurity layers contact with the top of the multi-level insulation film.

In one embodiment, the gate insulation film is formed of a single layer of insulation material.

In one embodiment, the gate insulation film includes a tunnel insulation film, an upper charge-trapping film, and a blocking insulation film, which are stacked in sequence.

In one embodiment, the multi-level insulation film further comprises: a first insulation film interposed between the lower charge-trapping film and the active pattern; and a second insulation film interposed between the lower charge-trapping film and the substrate.

In one embodiment, the semiconductor device further comprises: a field isolation film filling a trench formed in the substrate around the active pattern and covering sidewalls of the multi-level insulation film and the active pattern. The top of the field isolation film is partially leveled lower than the top of the multi-level insulation film and forms the bottom of a recess region, a sidewall of the recess region partially including a sidewall of the active pattern. The multi-level insulation film partially extends along the bottom and sidewall of the recess region.

In one embodiment, the semiconductor device further comprises: an embedded pattern disposed on the extending portion of the multi-level insulation film, filling the recess region.

According to another aspect, the present invention is directed to a semiconductor device which includes a substrate including first and second regions. A first active pattern and a dielectric film are stacked in sequence on the substrate of the first region, and a second active pattern and a multi-level insulation film are stacked in sequence on the substrate of the second region. The multi-level insulation film includes a lower charge-trapping film. First and second gate electrodes cross over the first and second active patterns, respectively. First and second gate insulation films are interposed between the first gate electrode and the first active pattern, and between the second gate electrode and the second active pattern, respectively. A pair of first impurity layers are formed in the first active pattern at both sides of the first gate electrode, respectively, and define a first channel region under the first gate electrode. The bottoms of the first impurity layers contact with the top of the dielectric film. A pair of second impurity layers are formed in the second active pattern at both sides of the second gate electrode, respectively, and define a second channel region under the second gate electrode. The bottoms of the second impurity layers contact with the top of the multi-level insulation film. The first channel region is used as a data storage field.

In one embodiment, the substrate of the first region is supplied with a voltage to provide attraction for excessive charges stored in the first channel region, the excessive charges being of the same polarity as majority carriers of the first channel region.

In one embodiment, the second gate insulation film is formed of a single layer of insulation material.

In one embodiment, the second gate insulation film includes a tunnel insulation film, an upper charge-trapping film, and a blocking insulation film, which are stacked in sequence.

In one embodiment, the dielectric film and the multi-level insulation film are made of the same material.

In one embodiment, the semiconductor device further comprises: a first field isolation film filling a first trench formed in the substrate of the first region around the first active pattern and covering sidewalls of the dielectric film and the first active pattern; and a second field isolation film filling a second trench formed in the substrate of the second region around the second active pattern and covering sidewalls of the multi-level insulation film and the second active pattern. The top of the first field isolation film is partially leveled lower than the top of the dielectric film and forms the bottom of a first recess region, a sidewall of the first recess region partially including a sidewall of the first active pattern, and the dielectric film partially extends along the bottom and sidewall of the first recess region. The top of the second field isolation film is partially leveled lower than the top of the multi-level insulation film and forms the bottom of a second recess region, a sidewall of the second recess region partially including a sidewall of the second active pattern, and the multi-level insulation film partially extends along the bottom and sidewall of the second recess region.

In one embodiment, the semiconductor device further comprises: a first embedded pattern disposed on the extending portion of the dielectric film, filling the first recess region; and a second embedded pattern disposed on the extending portion of the multi-level insulation film, filling the second recess region.

In one embodiment, the substrate further includes a third region, which further comprises: a third active pattern and a lower insulation film stacked in sequence on the substrate of the third region; a third gate electrode crossing over the third active pattern; a third gate insulation film interposed between the third gate electrode and the third active pattern; and a pair of third impurity layers formed in the third active pattern at both sides of the third gate electrode, respectively.

In one embodiment, the semiconductor device further comprises: a third field isolation film filling a third trench formed in the substrate of the third region around the third active pattern and covering sidewalls of the lower insulation film and the third active pattern. The top of the third field isolation film is partially leveled lower than the top of the lower insulation film and forms the bottom of a third recess region, a sidewall of the third recess region partially including a sidewall of the third active pattern. The lower insulation film partially extends along the bottom and sidewall of the third recess region.

In one embodiment, the semiconductor device further comprises: a third embedded pattern disposed on the extending portion of the lower insulation film, filling the third recess region.

In another aspect, the invention is directed to a method of fabricating a semiconductor device. The method may comprise the steps of: forming a sacrificial film and an active layer in sequence on a substrate; successively patterning the active layer, the sacrificial film, and the substrate to form a sacrificial pattern and an active pattern stacked in sequence, and a trench; forming a field isolation film to fill the trench; partially recessing the field isolation film to partially expose the sacrificial pattern; removing the sacrificial pattern by isotropically etching to form an empty region; forming a dielectric film to fill the empty region; forming a gate insulation film and a gate electrode to be stacked in sequence on the active pattern; and forming a pair of impurity layers to locate in the active pattern at both sides of the gate electrode, respectively. The bottoms of the impurity layers contact with the dielectric film. The channel region between the impurity layers is a data storage field.

In one embodiment, the substrate is supplied with a voltage to provide attraction for excessive charges stored in the channel region

In one embodiment, the method further comprises forming an embedded pattern to fill the recess region on the dielectric film formed on the bottom and sidewall of the recess region of the field isolation film.

In one embodiment, the dielectric film includes an insulation material higher than silicon oxide in dielectric constant.

According to another aspect, the invention is directed to a method of fabricating a semiconductor device, comprising: forming a sacrificial film and an active layer in sequence on a substrate; successively patterning the active layer, the sacrificial film, and the substrate to form a sacrificial pattern and an active pattern stacked in sequence, and a trench; forming a field isolation film to fill the trench; partially recessing the field isolation film to partially expose the sacrificial pattern; removing the sacrificial pattern by isotropically etching to form an empty region; forming a multi-level insulation film to fill the empty region, the multi-level insulation film including a lower charge-trapping film; forming a gate insulation film and a gate electrode to be stacked in sequence on the active pattern; and forming a pair of impurity layers to locate in the active pattern at both sides of the gate electrode, respectively, the bottoms of the impurity layers contacting with the multi-level insulation film.

In one embodiment, the gate insulation film is formed of a single layer of insulation material.

In one embodiment, the gate insulation film includes a tunnel insulation film, an upper charge-trapping film, and a blocking insulation film, which are stacked in sequence.

In one embodiment, forming the multi-level insulation film is comprised of: oxidizing the substrate having the recess region to form first and second insulation films to contact each with the top and bottom of the recess region; and forming the lower charge-trapping film to fill the recess region between the first and second insulation films.

In one embodiment, the method further comprises: forming an embedded pattern to fill the recess region on the dielectric film formed on the bottom and sidewall of the recess region of the field isolation film.

According to another aspect, the invention is directed to a method of fabricating a semiconductor device, comprising: forming a sacrificial film and an active layer in sequence on a substrate including first and second regions; successively patterning the active layer, the sacrificial film, and the substrate, in the first region, to form first sacrificial pattern and first active region stacked in sequence, and a first trench; successively patterning the active layer, the sacrificial film, and the substrate, in the second region, to form second sacrificial pattern and second active pattern sequentially stacked, and a second trench; forming first and second field isolation films to fill the first and second trenches, respectively; partially recessing the field and second isolation films to partially expose the first and second sacrificial patterns, respectively; removing the first and second sacrificial patterns by isotropically etching to form first and second empty regions of the first and second regions, respectively; forming a dielectric film to fill the first empty region; forming a multi-level insulation film to fill the second empty region, the multi-level insulation film including a lower charge-trapping film; forming a first gate insulation film and a first gate electrode to be stacked in sequence on the first active pattern; forming a second gate insulation film and a second gate electrode to be stacked in sequence on the second active pattern; forming a pair of first impurity layers to locate in the first active pattern at both sides of the first gate electrode, respectively, the bottoms of the first impurity layers contacting with the dielectric film; and forming a pair of second impurity layers to locate in the second active pattern at both sides of the second gate electrode, respectively, the bottoms of the second impurity layers contacting with the multi-level insulation film. The channel region between the first impurity layers is used as a data storage field.

A further understanding of the nature and advantages of the inventions herein may be realized by reference to the remaining portions of the specification and the attached drawings

BRIEF DESCRIPTION OF THE FIGURES

The foregoing and other objects, features and advantages of the invention will be apparent from the more particular description of preferred aspects of the invention, as illustrated in the accompanying drawings in which like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the invention. In the drawings, the thickness of layers and regions are exaggerated for clarity.

FIG. 1 illustrates partial plans of a semiconductor device in accordance with an embodiment by the invention.

FIG. 2A illustrates sections taken along lines I-I′, and of FIG. 1.

FIG. 2B illustrates sections taken along lines IV-IV′, V-V′, and VI-VI′ of FIG. 1.

FIG. 2C illustrates sections taken along lines VII-VII′, VIII-VIII′, and IX-IX′ of FIG. 1.

FIG. 3 is an sectional view illustrating a nonvolatile memory cell shown in FIG. 2A.

FIGS. 4A, 5A, 6A, 7A and 8A are sectional views illustrating processing steps for fabricating the semiconductor device according to an embodiment of the invention, taken along lines I-I′, and of FIG. 1.

FIGS. 4B, 5B, 6B, 7B and 8B are sectional views illustrating processing steps for fabricating the semiconductor device according to an embodiment of the invention, taken along lines IV-IV′, V-V′, and VI-VI′ of FIG. 1.

FIGS. 4C, 5C, 6C, 7C and 8C are sectional views illustrating processing steps for fabricating the semiconductor device according to an embodiment of the invention, taken along lines VII-VII′, VIII-VIII′, and IX-IX′ of FIG. 1.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Preferred embodiments of the present invention will be described below in more detail with reference to the accompanying drawings. The present invention may, however, be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In the figures, the dimensions of layers and regions are exaggerated for clarity of illustration. It will also be understood that when a layer is referred to as being ‘on’ another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may also be present. Further, it will be understood that when a layer is referred to as being ‘under’ another layer, it can be directly under, and one or more intervening layers may also be present. In addition, it will also be understood that when a layer is referred to as being ‘between’ two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present. Like reference numerals refer to like elements throughout.

FIG. 1 illustrates partial plans of a semiconductor device in accordance with an embodiment by the invention. FIG. 2A illustrates sections taken along lines I-I′, II-II′, and III-III′ of FIG. 1, and FIG. 2B illustrates sections taken along lines IV-IV′, V-V′, and VI-VI′ of FIG. 1. Further, FIG. 2C illustrates sections taken along lines VII-VII′, VIII-VIII′, and IX-IX′ of FIG. 1. FIG. 3 is a sectional view enlarging a nonvolatile memory cell shown in FIG. 2A.

Referring to FIGS. 1, 2A, 2B, and 2C, a semiconductor substrate (hereinafter, referred to as ‘substrate’) 100 includes a first region a, a second region b, and a third region c. The first region a corresponds to a region including volatile memory cells, and the second region b corresponds to a region including nonvolatile memory cells. The third region c corresponds to a region including field effect transistors belonging to peripheral circuits.

Dielectric films 120 a and first active patterns 106 a are sequentially stacked on the first region a of the substrate 100. In detail, the dielectric films 120 a fill first empty regions 116 a between the first active patterns 106 a and the substrate 100. The first active patterns 106 a are arranged in parallel on the substrate 100, being isolated from each other.

First field isolation films 112 a′ fill first trenches 110 a formed around the first active patterns 106 a in the first region a of the substrate 100. The first field isolation films 112 a′ cover sidewalls of the first active patterns 106 a and the dielectric films 120 a. Each of the first field isolation films 112 a′ is comprised of first and second portions. The top of the first portion of the first field isolation film 112 a′ is leveled lower than the top of the dielectric film 120 a locating in the first empty regions 116 a. The top of the first portion of the first field isolation film 112 a′ may be leveled with or lower than the bottom of the first empty region 116 a. The top of the second portion of the first field isolation film 112 a′ may be leveled with or lower than the top of the first active pattern 106 a. Thus, first recess regions 114 a are disposed at the first field isolation films 112 a′. The bottoms of the first recess regions 114 a meet with the tops of the first portions of the first field isolation films 112 a′. A sidewall of the first recess region 114 a includes a sidewall of the second portion of the first field isolation film 112 a′, and a sidewall of the first active pattern 106 a adjacent to the first portion of the first field isolation film 112 a′. That is, a part of the sidewall of the first active pattern 106 a is covered by the second portion of the first field isolation film 112 a′, while the other part of the sidewall of the first active pattern 106 a is not covered by the first field isolation film 112 a′ due to the presence of the first recess region 114 a.

Sidewalls of the first trenches 110 a are aligned to the sidewalls of the first active patterns 106 a. The sidewalls of the first trenches 110 a are also aligned to the sidewalls, which are each formed of the sidewalls of the first active patterns 106 a, of the first recess regions 114 a. Further, the sidewalls of the first trenches 110 a are aligned to partial sidewalls of the dielectric films 120 a disposed in the first empty regions 114 a.

The dielectric film 120 a partially extends to cover the bottom and sidewall of the first recess region 114 a. That is, the dielectric film 120 a partially extends to cover the top of the first portion of the first field isolation film 112 a′ and the sidewall of the first active pattern 106 a exposed by the first recess region 114 a. The top face of the dielectric film 120 a, covering the sidewall of the first active pattern 106 a, may be leveled with the top of the first active pattern 106 a.

On the extending portions of the dielectric films 120 a are disposed first embedded patterns 122 a. The first embedded patterns 122 a fill the first recess regions 114 a. In other words, the dielectric film 120 a partially extends to be interposed between the first embedded pattern 122 a and the bottom and sidewall of the first recess region 114 a. The top of the first embedded pattern 122 a may be leveled with the top of the second portion of the first field isolation film 112 a′.

The first active patterns 106 a are formed of a semiconductor. For example, the first active patterns 106 a may be made of single crystalline silicon. Each of the dielectric film 120 a includes a high-k film (k: dielectric constant) 202 having a higher dielectric constant than silicon oxide. For instance, the high-k film 202 may be made of silicon nitride. Alternatively, the high-k film 202 may be formed of insulative metal oxide (e.g., hafnium oxide or aluminum oxide) having a higher dielectric constant than silicon nitride. The portion of the dielectric film 120 a, extending upward the bottom and sidewall of the first recess region 114 a, includes the high-k film 202. Each of the dielectric film 120 a may be further comprised of a first oxide film 201 interposed between the high-k film 202 and the top of the first empty region 116 a (i.e., the bottom of the first active pattern 106 a), and a second oxide film 203 interposed between the high-k film 202 and the bottom of the first empty region 116 a (i.e., the upper face of the substrate 100). The first field isolation films 112 a′ may be formed of silicon oxide. The first embedded patterns 122 a may be formed of silicon oxide.

A first gate electrode 126 a crosses over the first active patterns 106 a, and a first gate insulation film 124 a is interposed between the first gate electrode 126 a and the first active pattern 106 a. The first gate electrode 126 a intersects the first active patterns 106 a arranged in parallel. The first gate electrode 126 a may be arranged in parallel with a predetermined interval in plurality over the first region a of the substrate 100. The first gate electrode 126 a is made of a conductive material. For instance, the first gate electrode 126 a may be formed including doped polysilicon, metal (e.g., tungsten or molybdenum), conductive metal nitride (e.g., titanium nitride or tantalum nitride), or metal silicide (e.g., tungsten silicide or cobalt silicide). The gate insulation film 124 a may be formed of silicon oxide.

At both sides of the first gate electrode 126 a, a pair of first impurity layers 130 are formed in the first active pattern 106 a. The first active pattern's region between the first impurity layers 130 adjacent to each other is defined as a first channel region. The first channel regions are disposed under the first gate electrodes 126 a. The bottoms of the couple of the first impurity layers 130 contact with the dielectric film 120 a placed in the first empty region 116 a. Thus, the first channel regions are floated with being isolated from each other. The first channel regions floating therein are used as data storage fields for the volatile memory cells.

A unit of the volatile memory cell is comprised of the first gate electrode 126 a, the pair of the first impurity layers 130 placed at both sides of the first gate electrode 126 a, and the first channel region between the first impurity layers 130. The pair of the impurity layers 130 are correspondent with source/drain regions of the volatile memory cell.

The volatile memory cell is variable in threshold voltage by presence or absence of excessive charges in the first channel region. The excessive charges are preferred to be the same type, i.e., of the same polarity or conductivity type, as majority carriers of the first channel region. In detail, the volatile memory cell where the first channel region is including excessive charges has a first threshold voltage, while the volatile memory cell where the first channel region is conditioned without excessive charges has a second threshold voltage. The first threshold voltage is different from the second threshold voltage. For instance, if the first impurity layers 130 are doped with N-type impurities, the excessive charges are holes and the second threshold voltage is higher than the first threshold voltage. By applying a sensing voltage, which is intermediate between the first and second threshold voltages, to the first gate electrode 126 a, it is able to determine whether a data bit stored in the volatile memory cell is logically ‘0’ or ‘1’.

It is preferred to supply the substrate 100 with a voltage to provide attraction for excessive charges in the first channel region. Accordingly, it enhances the capability of data retention in the volatile memory cell. That is, it is possible to lengthen a time for holding excessive charges in the first channel region by applying the voltage for attraction to the first region a of the substrate 100. Further, the voltage of attraction is helpful to extending a non-depletion region in the first channel region, which assures a sufficient space for storing the excessive charges thereto. The voltage of attraction applied to the first region a of the substrate 100 is preferred to be normally conductive while the volatile memory cell is being active.

Storing excessive charges in the first channel region may be accomplished by using hot carrier effect or gate-induced drain leakage (GIDL) effect. In the case that the volatile memory cell is an NMOS type, the hot carrier effect generates hot carriers in the channel region adjacent to one of the first impurity layers 130. According to this method, the hot carriers induce electron-hole pairs and holes are accumulated in the first channel region. Thus, the first channel region is able to store excessive charges capable of maintaining a voltage therein lower than a threshold voltage (about 0.7V) of a PN junction between the first impurity layer 130 and the first channel region. Thereby, a depletion layer in a region where the first gate electrode 126 a overlaps with the first impurity layer 130 get abruptly bent to make electrons tunnel into the conduction band from the valence band. During this, the tunneling electrons induce electron-hole pairs and holes generated therein are stored in the first channel region as the excessive charges.

Removing the excessive charges from the floating channel region is accomplished by setting a forward bias to the PN junction between and the first impurity layer 130 and the first channel region. Thereby, the excessive charges flow out from the first channel region.

The pair of the first impurity layers 130 belonging to the volatile memory cell may be shared by other volatile memory cells placed at both sides thereof in the same of the first active pattern 106. As a result, when the minimum width definable by a typical photolithography process is ‘F’, it is possible to optimize integration density of the unit volatile memory cell in the area of 4F².

As aforementioned, the first region a of the substrate 100 is supplied with the voltage providing attraction to excessive charges of the first channel region. Here, the dielectric film 120 a is formed including an insulation material having a higher dielectric constant than silicon oxide. Thus, the voltage for attraction increases a voltage induced in the first channel region. As a result, it decreases the absolute value of the attraction voltage, reducing power consumption in the semiconductor device and hence implementing a highly integrated semiconductor device.

Referring to FIGS. 1, 2A, 2B, 2C, and 3, multi-level insulation films 120 b and second active patterns 106 b are stacked in sequence on the second region b of the substrate 100. The multi-level insulation films 120 b fill second empty regions 116 b between the second active patterns 106 b and the second region b of the substrate 100. The second active patterns 106 b may be arranged in parallel on the second region b of the substrate, being isolated from each other.

Each of the multi-level insulation films 120 b is comprised of a lower charge-trapping film 212. The multi-level insulation film 120 b further includes a first insulation film 211 interposed between the lower charge-trapping film 212 and the second active pattern 106 b, and a second insulation film 213 interposed between the lower charge-trapping film 212 and the substrate 100.

Second field isolation films 112 b′ fill second trenches 110 b formed around the second active patterns 106 b in the second region b of the substrate 100, covering sidewalls of the second active patterns 106 b and the multi-level insulation films 120 b. Each of the second field isolation films 112 b′ is composed of first and second portions. The top of the first portion of the second field isolation film 112 b′ is leveled lower than the top of the multi-level film 120 b placed in the second empty region 116 b. The top of the first portion of the second field isolation film 112 b′ may be leveled with or lower than the bottom of the second empty region 116 b. The top of the second portion of the second field isolation film 112 b′ may be leveled with or lower than the second active pattern 106 b. Thus, second recess regions 114 b are defined in the second field isolation films 106 b. The bottom of the second recess region 114 b meets with the top of the first portion of the second field isolation film 112 b′, and a sidewall of the second recess region 114 b includes a sidewall of the second portion of the second field isolation film 112 b′, and a sidewall of the second active pattern 106 b adjacent to the first portion of the second field isolation film 112 b′. The second portion of the second field isolation film 112 b′ partially covers the sidewalls of the multi-level insulation film 120 b in the second empty region 116 b.

The multi-level insulation film 120 b partially extends to cover the bottom and sidewall of the second recess region 114 b. That is, the extending portion of the multi-level insulation film 120 b covers to top of the second portion of the second field isolation film 112 b′ and the sidewall of the second active pattern 106 b which forms with the sidewall of the second recess region 114 b. Specifically, the extending portion of the multi-level insulation film 120 b includes the lower charge-trapping film 212 at least. On the extending portions of the multi-level insulation films 120 b, second embedded patterns 122 b are disposed to fill the second recess regions 114 b. The top of the second embedded pattern 122 b may be leveled with the top of the second portion of the second field isolation film 112 b′.

The second active patterns 106 may be formed of a semiconductor, e.g., single crystalline silicon. The lower charge-trapping films 212 are made of an insulator having traps of deep potential. For instance, the lower charge-trapping films 212 may be formed of insulation films containing silicon nitride or pluralities of nano-crystals. These nano-crystals may be made of a semiconductor. The first and second insulation films 211 and 213 may be formed of silicon oxide, as well as the second field isolation films 112 b′ and the second embedded patterns 122 b.

A second gate electrode 126 b crosses over the second active patterns 106 b. Between the second gate electrode 126 b and the second active pattern 106 b is interposed a second gate insulation film 124 b. The second gate insulation electrode may be arranged in parallel with a predetermined interval in plurality over the second region b of the substrate 100. The second gate insulation film 125 b may be composed of a single layer of insulation film. Alternatively, the second gate insulation film 124 b may be comprised of a tunnel insulation film 221, an upper charge-trapping film 222, and a blocking insulation film 223 those are stacked in sequence.

The second gate electrode 126 b is made of a conductive material. For instance, the second gate electrode 126 b may be formed including doped polysilicon, metal (e.g., tungsten or molybdenum), conductive metal nitride (e.g., titanium nitride or tantalum nitride), or metal silicide (e.g., tungsten silicide or cobalt silicide). If the second gate insulation film 124 b is formed of a single insulation material, it may be made of silicon oxide. Otherwise, when the second gate insulation film 124 b is composed of the films 221, and 222, and 223, those films may be made of materials as described hereafter. The tunnel insulation film 221 may be made of silicon oxide, and the upper charge-trapping film 222 is formed of a material having traps of deep potential. For example, the upper charge-trapping film 222 may be formed of an insulation film containing silicon nitride or pluralities of nano-crystals. The blocking insulation film 223 may be formed of silicon oxide. The blocking insulation film 223, otherwise, may contain a high-k (k: dielectric constant) film having a higher dielectric constant than the tunnel oxide film 221, e.g., an insulative metal oxide such as aluminum oxide or hafnium oxide.

A pair of second impurity layers 131 a and 131 b are formed at both sides of the second gate electrode 126 b in the second active pattern 106 b. The second active pattern 106 b between the second impurity layers adjacent to each other is defined as a second channel region. The second channel regions are disposed each under the second gate electrodes 126 b. The bottoms of the second impurity layers 131 a and 131 b are preferred to contact with the top of the multi-level insulation film 120 a.

The nonvolatile memory cell is comprised of the second channel region, the multi-level insulation film 120 b and the second gate insulation film 124 b those are respectively disposed the upper and lower portions of the second channel region, the pair of the second impurity layers 131 a and 131 b disposed each at both sides of the second channel region, and the second gate electrode 126 b. The second impurity layers, 131 a and 131 b, are correspondent with first and second source/drain regions, respectively.

The lower charge-trapping film 212 placed under the second channel region is used as a data storage field. A threshold voltage of the nonvolatile memory cell is variable in accordance with presence of charges in the lower charge-trapping film 212. In other words, charges stored in the lower charge-trapping film 212 makes an effect of setting a back bias to the second channel region. Thus, the back bias condition at the second channel region varies dependent on presence or absence of the charges stored in the lower charge-trapping film 212, changing the threshold voltage of the nonvolatile memory cell. Using such variation of threshold voltage, a data bit is read out from the nonvolatile memory cell. The nonvolatile memory cell may be formed in an NMOS type where the first and second source/drain regions 131 a and 131 b are doped with N-type impurities while the second channel region is doped with P-type impurities. Otherwise, the nonvolatile memory cell may be formed in a PMOS type where the first and second source/drain regions 131 a and 131 b are doped with P-type impurities while the second channel region is doped with P-type impurities. Hereinafter, for convenience of description, it will be detailed about operations by the nonvolatile memory cell that is an NMOS type.

Operations of the nonvolatile memory cell where the second gate insulation film 124 b is composed of a single insulative layer will be described herein. In this case, the lower charge-trapping film 212 under the second channel region is able to store 1-bit or 2-bit data therein. At least one of first and second sectors 250 a and 250 b in the lower charge-trapping film 212 is correspondent with the data storage field. The first and second sectors 250 a and 250 b are isolated from each other. When one of first and second sectors 250 a and 250 b is used as the data storage field, the nonvolatile memory cell is able to store 1-bit data. When all of first and second sectors 250 a and 250 b are used as the data storage field, the nonvolatile memory cell is able to store 2-bit data.

Storing electrons into the data storage filed is accomplished by way of hot carrier injection. As an example, 0V is applied to the second region b of the substrate 100, while a writing gate voltage is applied to the second gate electrode 126 b. The first and second source/drain regions 131 a and 131 b are supplied each with first and second writing source/drain voltages. The writing gate voltage and the first and second writing source/drain voltages are all negative. When the second writing source/drain voltage is a negative lower than the first writing source/drain voltage, electrons are stored in the first sector 250 a. When the first writing source/drain voltage is a negative lower than the second writing source/drain voltage, electrons are stored in the second sector 250 a.

Erasing electrons from the data storage field may use Fowler-Nordheim (FN) tunneling mode, or a method for injecting holes thereinto by hot carrier injection. In employing the FN tunneling mode, electrons are removed from the data storage field by generating a voltage difference between the second gate electrode 126 b and the substrate 100 of the second region b. The operation of erasing electrons from the data storage field may be carried out in the unit of cell or cell block.

A method of reading data from the nonvolatile memory cell will now be described. In reading a data bit from the first sector 250 a, a read voltage is applied to the second gate electrode 126 b, the ground voltage is applied to the first source/drain region 131 a, and a positive drain voltage is applied to the second source/drain region 131 b. The positive drain voltage applied to the second source/drain region 131 b causes the second channel region to be depleted around the second sector 250 b. Thus, it is able to detect a threshold voltage of the nonvolatile memory cell in accordance with a state of data stored in the first sector 250 a without being affected from data stored in the second sector 250 b. During this, the substrate 100 of the second region b may be supplied with 0V.

In reading a data bit from the second sector 250 b, a read voltage is applied to the second gate electrode 126 b, a positive drain voltage is applied to the first source/drain region 131 a, and the ground voltage is applied to the second source/drain region 131 b. The positive drain voltage applied to the first source/drain region 131 a causes the second channel region to be depleted around the first sector 250 a. Thus, it is able to detect a threshold voltage of the nonvolatile memory cell in accordance with a state of data stored in the second sector 250 b without being affected from data stored in the first sector 250 a. As also, during this, the substrate 100 of the second region b may be supplied with 0V.

As described above, the second gate insulation film 124 b may be comprised of a tunnel insulation film 221, an upper charge-trapping film 222, and a blocking insulation film 223 those are stacked in sequence thereon. Operational modes of the nonvolatile memory cell including the upper charge-trapping film 222 will now be described. Also, for convenience of description, it will be assumed that the nonvolatile memory cell is an N-type. In this case, the nonvolatile memory cell is able to store 1-bit through 4-bit data by the lower and upper charge-trapping films 212 and 222. That is, the data storage field is selected from the first and second sectors 250 a and 250 b aforementioned, and the third and fourth sectors 250 c and 250 d, which are adjacent each to the first and second source/drain regions 131 a and 131 b, of the upper charge-trapping film 212.

When one of the first through fourth sectors 250 a, 250 b, 250 c, and 250 d is selected as the data storage field, the nonvolatile memory cell is able to store 1-bit data. Otherwise, two of the first through fourth sectors 250 a, 250 b, 250 c, and 250 d is selected as the data storage fields, the nonvolatile memory cell is able to store 2-bit data. On the other hand, the first through fourth sectors 250 a, 250 b, 250 c, and 250 d are all used as the data storage fields, the nonvolatile memory cell is able to store 4-bit data.

As an example, operations of the nonvolatile memory cell using the first through fourth sectors 250 a˜250 d all as the data storage fields will be described. First, a writing operation in the nonvolatile memory cell will be described. Storing electrons in the first and second sectors 250 a and 250 b may be carried out in the same progress with the case that the second gate insulation film 124 b is formed of a single layer of insulation material. Storing electrons into the third sector 250 c is accomplished by applying: 0V to the second region b of the substrate 100; a positive writing gate voltage to the second gate electrode 126 b; a positive source/drain voltage to the first source/drain voltage; and 0V to the second source/drain region 131 b. According to this, hot carriers are generated in the second channel region adjacent to the third sector 250 c, inducing electron-hole pairs. The electrons generated therein are stored in the third sector 150 c. Otherwise, when 0V is applied to the first source/drain region and a positive voltage is applied to the second source/drain region 131 b, electrons are forced to be stored in the fourth sector 250 d.

Erasing electrons from the first through fourth sectors 250 a˜250 d may use Fowler-Nordheim (FN) tunneling mode, or a method for injecting holes thereinto by hot carrier injection. The operation of erasing electrons from the first through fourth sectors 250 a˜250 d of the nonvolatile memory cell may be carried out in the unit of cell or cell block.

Then, a method of reading data from the first through fourth sectors 250 a˜250 d of the nonvolatile memory cell will be described. According to conditions of data stored in the first and third sectors 250 a and 250 c, there are four available states of threshold voltage in turning the second channel region (i.e., a part adjacent to the first source/drain region 131 a of the second channel region) between the first and second sectors 250 a and 250 b. That is, the nonvolatile memory cell is conditioned in a first state where the first and third sectors 250 a and 250 c all store electrons, a second state where there is no electron in both the first and third sectors 250 a and 250 c, a third state where only the first sector 250 a stores electrons, or a fourth state where only the third sector 250 c stores electrons. In the nonvolatile memory cell, the second channel region is partially variable with the four levels in threshold voltage, around the first source/drain region 131 a, according to the first through fourth states. Specifically, the third state corresponds to a condition of changing a back bias to the nonvolatile memory cell while the fourth state corresponds to a condition that electrons are stored in the third sector 250 c under the second gate electrode 126 b. Thus, the third state is different from the fourth state in threshold voltage. Through first and second readout operations with respectively using first and second sensing voltages applied to the second gate electrode 126 b in the condition that the first source/drain region 131 a is being supplied with the ground voltage while the second source/drain region 131 b is being supplied with the positive drain voltage, 2-bit data are read out from the first and third sectors 250 a and 250 c. During this, the positive drain voltage applied to the second source/drain region 131 b causes the second channel region to be depleted around the second source/drain region 131 b. Thus, it is able to detect data stored in the first and third sectors 250 a and 250 c without being affected from data stored in the second and fourth sectors 250 b and 250 d.

On the other hand, the nonvolatile memory cell using the first through fourth sectors 250 a˜250 d as the data storage fields, according to conditions of data stored in the second and fourth sectors 250 b and 250 d, there are four available states of threshold voltage in turning the second channel region (i.e., a part adjacent to the second source/drain region 131 b of the second channel region) between the first and second sectors 250 a and 250 b. In other words, the nonvolatile memory cell is conditioned in a fifth state where the second and fourth sectors 250 b and 250 d all store electrons, a sixth state where there is no electron in both the second and fourth sectors 250 b and 250 d, a seventh state where only the second sector 250 b stores electrons, or an eighth state where only the fourth sector 250 d stores electrons. In the nonvolatile memory cell, the second channel region is partially variable with the four levels in threshold voltage, around the second source/drain region 131 b, according to the fifth through eighth states. Through third and/or fourth readout operations with respectively using third and fourth sensing voltages applied to the second gate electrode 126 b in the condition that the first source/drain region 131 a is being supplied with the positive drain voltage while the second source/drain region 131 b is being supplied with the ground voltage, 2-bit data are read out from the second and fourth sectors 250 b and 250 d. The positive drain voltage applied to the first source/drain region 131 a causes the second channel region to be depleted around the first source/drain region 131 a. Thus, it is able to detect data stored in the second and fourth sectors 250 b and 250 d without being affected from data stored in the first and third sectors 250 a and 250 c.

From combining data bits held in the first and second sectors 250 a and 250 c with data bits held in the second and fourth sectors 250 b and 250 d, it offers 16 states to enable the nonvolatile memory cell to store 4-bit data therein. It is also permissible to read out 4-bit data from the nonvolatile memory cell by combining data obtained from the first and third sectors 250 a and 250 c with data obtained from the second and fourth sectors 250 b and 250 d.

Continuously referring to FIGS. 1, 2A, 2B, and 2C, on the third region c of the substrate 100, a lower insulation film 120 c and a third active pattern 106 c are stacked in sequence. The lower insulation film 120 c fills a third empty region 116 c between the substrate 100 of the third are C and the third active pattern 106 c. The lower insulation film 120 c provides the third active pattern 106 c with tension to make atomic lattices expand in the third active pattern 106 c. In this case, the lower insulation film 120 c may include an insulation film that provides the third active pattern 106 c with contactable tension thereto. For instance, the lower insulation film 120 c may be formed with including a silicon nitride film that contacts to the bottom of the third active pattern 106 c. Otherwise, the lower insulation film 120 c may contain another insulation material. For example, the lower insulation film 120 c may be further comprised of a third oxide film interposed between the third active pattern and the insulation film of tension, and a fourth oxide film interposed between the substrate 100 of the third region c and the insulation film of tension.

Third field isolation films 112 c′ fill third trenches 110 c formed in the third region c of the substrate 100 around the third active pattern 106 c, covering sidewalls of the third active pattern 106 c and the lower insulation film 120 c. Each of the third field isolation films 112 c′ is composed of first and second portions. The top of the first portion of the third field isolation film 112 c′ is leveled lower than the top of the lower insulation film 120 c placed in the third empty region 116 c. The top of the first portion of the third field isolation film 112 c′ may be leveled with or lower than the bottom of the third empty region 116 c. The top of the second portion of the third field isolation film 112 c′ may be leveled with or higher than the third active pattern 106 c. Thus, third recess regions 114 c are defined in the third field isolation films 106 c. The bottom of the third recess region 114 c meets with the top of the first portion of the third field isolation film 112 c′, and a sidewall of the third recess region 114 c includes a sidewall of the second portion of the third field isolation film 112 c′, and a sidewall of the third active pattern 106 c adjacent to the first portion of the third field isolation film 112 c′. The third field isolation film 112 c′ partially may be formed of silicon oxide.

The lower insulation film 120 c partially extends to cover the bottom and sidewall of the third recess region 114 c. On the extending portions of the lower insulation films 120 c, third embedded patterns 122 c are disposed to fill the third recess regions 114 c. The top of the third embedded pattern 122 c may be leveled with the top of the second portion of the third field isolation film 112 c′. The third embedded pattern 122 c may be made of silicon oxide.

A third gate electrode 126 c crosses over the third active patterns 106 c. Between the third gate electrode 126 c and the third active pattern 106 c is interposed a third gate insulation film 124 c. At both sides of the third gate electrode 126 c, third impurity layers 132 are formed in the third active pattern 106 c. The third active pattern 106 c between the third impurity layers 132 is defined as a third channel region. The third gate electrode 126 c covers the third channel region. The third gate electrode 126 c is made of a conductive material, for example, doped polysilicon, metal (e.g., tungsten or molybdenum), conductive metal nitride (e.g., titanium nitride or tantalum nitride), or metal silicide (e.g., tungsten silicide or cobalt silicide). The third gate insulation film 124 c may be silicon oxide.

The field effect transistor is constructed with including the third gate electrode 126 c, the third channel region, the couple of the third impurity layers 132 at both sides of the third channel region, and the third gate insulation film 124 c. In operating the field effect transistor, a voltage applied to the third gate electrode 126 c may be lower than the voltage applied to the first gate electrode 126 a for the read operation.

When the lower insulation film 120 c includes an insulation film that provides the third active pattern 106 c with contactable tension thereto, atomic lattices of the third channel region expand by the lower insulation film 120 c. Accordingly, the mobility of carriers flowing through the third channel region increases to enlarge the amount of turn-on current of the field effect transistor, which is advantageous to implementing a high-performance field effect transistor.

The dielectric film 120 a, the multi-level insulation film 120 b, and the lower insulation film 120 c are formed in the same material. Namely, the first oxide film 201 of the dielectric film 120 a, the first insulation film 211 of the multi-level insulation film 120 b, and the third oxide film of the lower insulation film 120 c are made of the same material. The high-k film 202 of the dielectric film 120 a, the lower charge-trapping film 212 of the multi-level insulation film 120 b, and the insulation film, which provides tension, of the lower insulation film 120 c are made of the same material. The second oxide film 203 of the dielectric film 120 a, the second insulation film 213 of the multi-level insulation film 120 b, and a fourth oxide film of the lower insulation film 120 c are also made of the same material.

According to the semiconductor device, the volatile memory cell of the first region a uses the first channel region as the data storage field. Thus, it minimizes step differences on the semiconductor device with a plurality of the volatile memory cell, making it easier to fabricate the semiconductor device. Further, since the volatile memory cell shares the pair of the impurity layers 130 with other volatile memory cells adjacent thereto at both sides thereof Thereby, the volatile memory cell is able to be integrated in the area dimensions of 4F². As a result, it is possible to offer a highly integrated semiconductor device. In addition, the substrate 100 under the first channel region is supplied with the voltage that provides attraction for the excessive charges to be stored in the first channel region, it improves the capability of data retention by the first channel region. And, as the dielectric film 120 a interposed between the first channel region and the substrate of the first region a includes the high-k film 202 having a higher dielectric constant than silicon oxide, it is able to raise a ratio between a voltage, which is induced in the first channel region, and the voltage of attraction. As a result, the rate of power consumption is reduced in the semiconductor device.

In the nonvolatile memory cell of the second region b, data is stored in the lower charge-trapping film 212 under the second channel region. Specifically, as the first and second sectors 250 a and 250 b of the lower charge-trapping film 212 are used as the data storage fields, the nonvolatile memory cell acts as a multi-bit cell capable of storing 2-bit data. Additionally, the nonvolatile memory cell may include the upper charge-trapping film 222 on the second channel region. Thus, it is permissible to store data bits in the lower and upper charge-trapping films 212 and 222, implementing a highly integrated nonvolatile memory cell capable of storing more two data bits. Moreover, the first and second source/drain regions 131 a and 131 b belonging to the nonvolatile memory cell are shared by adjacent nonvolatile memory cells adjacent thereto. According to this, the nonvolatile memory cell is able to be fabricated in the areal dimensions of 4F², implementing a highly integrated semiconductor device.

With the highly integrated volatile and nonvolatile memory cell as aforementioned and illustrated, the semiconductor device is operable in high-performance and multi-functional modes including a volatile cell array composed of the volatile memory cells, and a nonvolatile cell array composed of the nonvolatile memory cells in the same substrate.

On the other hand, a semiconductor device according to another embodiment of the invention may be configured to be a volatile memory device including a volatile cell array composed of the volatile memory cells that are formed in the first region a. Further, a semiconductor device according to another embodiment of the invention may be configured to be a nonvolatile memory device including a nonvolatile cell array composed of the nonvolatile memory cells that are formed in the second region b. Also, the volatile memory device according to another embodiment may include the high-performance field effect transistors of the third region c in the substrate. The nonvolatile memory device according to another embodiment may also include the high-performance field effect transistors of the third region c in the substrate.

Now, the procedure of fabricating the semiconductor device in accordance with the present invention will be described.

FIGS. 4A through 8A are sectional views illustrating processing steps for fabricating the semiconductor device by the embodiment of the invention, taken along lines I-I′, and of FIG. 1, and FIGS. 4B through 8B are sectional views illustrating processing steps for fabricating the semiconductor device by the embodiment of the invention, taken along lines IV-IV′, V-V′, and VI-VI′ of FIG. 1. FIGS. 4C through 8C are sectional views illustrating processing steps for fabricating the semiconductor device by the embodiment of the invention, taken along lines VII-VII′, VIII-VIII′, and IX-DC of FIG. 1.

First, referring to FIGS. 4A, 4B, and 4C, the substrate 100 including the first, second, and third regions a, b, and c is prepared. Different or same wells may be formed in the first, second, and third regions a, b, and c of the substrate 100. The substrate 100 is preferred to be formed of single crystalline silicon.

Sacrificial and active layers are sequentially formed all over the substrate 100. The sacrificial layer is formed of a material having etching selectivity to the active layer and the substrate 100. The sacrificial layer is preferred to be formed of a semiconductor. The sacrificial layer is preferred to be formed by means of a first epitaxial process, using silicon and germanium source gases, on the substrate 100. Thus, the sacrificial layer is made of a silicon-germanium layer. The active layer is preferred to be formed by means of a second epitaxial process, using silicon source gas, on the sacrificial layer. Thus, the active layer is made of a single crystalline silicon layer.

First, second, and third hard mask patterns 108 a, 108 b, and 108 c are formed on the active layers of the first, second, and third regions a, b, and c, respectively. The first hard mask patterns 108 a may be arranged in parallel with a predetermined interval on the active layer of the first region a. The second hard mask patterns 108 b may be arranged in parallel with a predetermined interval on the active layer of the second region b. The first, second, and third hard mask patterns 108 a, 108 b, and 108 c are preferred to be formed including a material that has etching selectivity to the active layer, the sacrificial layer, and the substrate 100. For instance, the hard mask patterns 108 a, 108 b, and 108 c may be made of silicon nitride.

Using the first, second, and third hard mask patterns 108 a, 108 b, and 108 c as a mask, the active layer, the sacrificial layer, and the substrate 100 are patterned to form first trench 110 a defining first active region of the first region a, second trench 110 b defining second active region of the second region b, and third trench 110 c defining third active region of the third region c. During this, first sacrificial pattern 104 a and first active pattern 106 a are formed stacked in sequence on the first active region, while second sacrificial pattern 104 b and second active pattern 106 b are formed stacked in sequence on the second active region. The third sacrificial pattern 104 c and third active pattern 106 c are formed with being stacked in sequence in the third active region.

After depositing a field-isolating insulation film to fill the first, second, and third trenches 110 a, 110 b, and 110 c all over the substrate 100, the field-isolating insulation film is patterned until exposing the first through third hard mask patterns 108 a˜108 c, resulting in the first, second, third field isolation films 112 a, 112 b, and 112 c to each fill the first, second, and third trenches 110 a, 110 b, and 110 c.

Next, referring to FIGS. 5A, 5B, and 5C, the first field isolation films 112 a are partially removed to form the first recess regions 114 a to partially expose sidewalls of the first sacrificial and active patterns 104 a and 106 a. The bottoms of the first recess regions 114 a are lower than the tops of the first sacrificial patterns 104 a. Specifically, the bottoms of the first recess regions 114 a may be leveled with or lower than the bottoms of the first sacrificial patterns 104 a. Each of the first field isolation films 112 a′ associated with the first recess regions 114 a is composed of the first and second portions. The tops of the second portions of the first field isolation films 112 a′ may be leveled with the tops of the first hard mask patterns 108 a. That is, the bottoms of the first field isolation films 112 a′ constitute the bottoms of the first recess regions 114 a, without covering the sidewalls of the first active patterns. The second portions of the first field isolation films 112 a′ partially cover the sidewalls of the second active patterns 106 a, contacting thereto.

The second field isolation films 112 b are partially removed to form the second recess regions 114 b to partially expose sidewalls of the second sacrificial and active patterns 104 b and 106 b. The bottoms of the second recess regions 114 b are lower than the tops of the second sacrificial patterns 104 b. Specifically, the bottoms of the second recess regions 114 b may be leveled with or lower than the bottoms of the second sacrificial patterns 104 b. As similar to the first field isolation films 112 a′, the first portions of the second field isolation films 112 b′ having the second recess regions 114 b do not partially cover the sidewalls of the second active patterns 106 b, but the second portions of the second field isolation films 112 b′ partially cover the sidewalls of the second active patterns 106 b.

The third field isolation films 112 c are partially removed to form the third recess regions 114 c to partially expose sidewalls of the third sacrificial and active patterns 104 c and 106 c. The bottoms of the third recess regions 114 c are lower than the tops of the third sacrificial patterns 104 c. Specifically, the bottoms of the third recess regions 114 c may be leveled with or lower than the bottoms of the third sacrificial patterns 104 c. As similar to the first field isolation films 112 a′, the first portions of the third field isolation films 112 b′ having the third recess regions 114 c do not partially cover the sidewalls of the third active patterns 106 c, but the second portions of the third field isolation films 112 c′ partially cover the sidewalls of the third active patterns 106 c.

The first through third recess regions 114 a˜114 c may be formed at the same time.

A selective isotropic etching process is carried out to remove the first through third sacrificial patterns 104 a˜104 c each exposed by the first through third sacrificial patterns 104 a˜104 c. Thereby, the first empty regions 116 a are formed between the first active patterns 106 a and the first region a of the substrate 100. The second empty regions 116 b are formed between the second active patterns 106 b and the second region b of the substrate 100, and the third empty regions 116 c are formed between the third active patterns 106 c and the third region c of the substrate 100. During this, the second portions of the first field isolation films 112 a′ contact with the sidewalls of the first active patterns 106 a, physically supporting first active patterns 106 a. As also, the second portions of the second and third field isolation films 112 b′ and 112 c′ physically support the second and third active patterns 106 b and 106 c.

Next, referring to FIGS. 6A, 6B, and 6C, the dielectric films 120 a are formed to fill the first empty regions 116 a in the first region a. The multi-level insulation films 120 b are formed to fill the second empty regions 115 b in the second region b. The lower insulation films 120 c are formed to fill the third empty regions 115 c in the third region c.

Each dielectric film 116 a includes the high-k film 202 having a higher dielectric constant than a silicon oxide film. The dielectric film 120 a may be further comprised of the first oxide film 201 interposed between the high-k film 202 and the first empty region 116 a, and the second oxide film 203 interposed between the high-k film 202 and the substrate that is the bottom of the first empty region 116 a. Each of the multi-level insulation films 120 b is comprised of the lower charge-trapping film 212, the first insulation film 211 interposed between the lower charge-trapping film 212 and the second active pattern 106 b, and the second insulation film 213 interposed between the lower charge-trapping film 212 and the substrate 100 that is the bottom of the second empty region 116 b. Each of the lower insulation films 120 c may include the insulation film that directly contacts with the third active pattern 106 c to provide tension thereto. Otherwise, the lower insulation film 120 c may include the third oxide film interposed placed under the third active pattern, and the fourth oxide film formed on the bottom of the third empty region 116 c, and the insulation film that provides tension with filling the third empty region 116 c between the third and fourth oxide films. The dielectric films 120 a, the multi-level insulation films 120 b, and the lower insulation films 120 b may be made of the same material. The dielectric films 120 a, the multi-level insulation films 120 b, and the lower insulation films 120 b may also include different insulation materials from each other.

Hereinafter the procedure of fabrication when the dielectric films 120 a, the multi-level insulation films 120 b, and the lower insulation films 120 c include different insulation materials from each other will be described. First, a first oxidation process is carried out to deposit the first and second oxide films 201 and 203 on the tops and bottoms of the first empty regions 116 a. The first oxide films 201 may be deposited even on the sidewalls of the first active patterns 106 a exposed in the first recess regions 114 a. After then, the high-k films 202 are conformably formed all over the substrate 100, filling the first empty regions 116 a between the first and second oxide films 201 and 203. The high-k films 202 are conformably formed even on the bottoms and sidewalls of the first recess regions 114 a. The same materials with the first and second oxide films 201 and 203, and the high-k films 202 are selectively from the second and third regions b and c of the substrate 100 to form the second and third empty regions 116 b and 116 c.

Thereafter, a second oxidation process is conducted to deposit the first and second insulation films 211 and 213 on the bottoms and bottoms of the second empty regions 116 b. The first insulation films 211 may be formed even on the sidewalls of the second active patterns 106 b exposed by the second recess regions 211. The lower charge-trapping are conformably formed all over the substrate 100, filling the second empty regions 116 b between the first and second insulation films 211 and 213. The lower charge-trapping films 212 are conformably formed even on the bottoms and sidewalls of the second recess regions 114 b.

The lower charge-trapping films 212 are selectively removed from the first and third regions a and c of the substrate 100, and the same material with the first and second insulation films 211 and 213 are removed from the third region c of the substrate 100. Thereby, it results in the third empty regions 116 c.

The lower insulation film 120 c is deposited to fill the third empty regions 116 c. The lower insulation film 120 c may be completed by forming the insulation film, which provides contactable tension to the bottoms of the third active patterns 106 c, in the condition with the third empty regions 116 c. Otherwise, the lower insulation film 120 c may be completed by, after depositing the third and fourth oxide films on the tops and bottoms of the third empty regions 116 c by way of a third oxidation process, forming the insulation films of tension to fill the third empty regions 116 c between the third and fourth oxide films. The insulation film of tension is conformably formed even on the bottoms and sidewalls of the third recess regions 114 c. It is able to selectively remove the same material with the insulation film of tension from the first and second regions A and B of the substrate 100.

Next, the procedure of fabrication when the dielectric films 120 a, the multi-level insulation films 120 b, and the lower insulation films 120 c include the same material will be described. First, an oxidation process is carried out to deposit the first and second oxide films 201 and 203 each on the tops and bottoms of the first empty regions 116 a, the first and second insulation films 211 and 213 on the tops and bottoms of the second empty regions 116 b, and the third and fourth oxide films each on the tops and bottoms of the third empty regions 116 c.

The material films are conformably formed to fill the first empty regions 116 a between the first and second oxide films 201 and 203, the second empty regions 116 b between the first and second insulation films 211 and 213, and the third empty regions 116 c between the third and fourth oxide films. The material films filing the first, second, and third empty regions 116 a, 116 b, and 116 c are correspondent with the high-k dielectric film 202, the lower charge-trapping film 212, and the insulation film of tension, respectively. The material films are conformably formed even on the sidewalls and bottoms of the first through third recess regions 114 a˜114 c.

Referring to FIGS. 6A, 6B, and 6C, an embedded film 122 is formed all over the substrate 100, filling the first through third recess regions 114 a˜114 c. The embedded film 122 may be made of silicon oxide.

Then, referring to FIGS. 7A, 7B, and 7C, the embedded film 122, the high-k film 202, the lower charge-trapping film 212, and the lower insulation film 120 c are partially flattened until exposing the hard mask patterns 108 a, 108 b, and 108 c. This planarization process results in the first, second, and third embedded patterns 122 a, 122 b, and 122 c filling the first, second, and third recess regions 114 a, 114 b, and 114 c.

Thereafter, the hard mask patterns 108 a, 108 b, and 108 c are removed therefrom to expose the tops of the first, second, and third active patterns 106 a, 106 b, and 106 c. Before removing the hard mask patterns 108 a˜108 c, it is permissible to farther conduct a processing step of recessing the tops of the field isolation films 112 a′˜112 c′ and the embedded patterns 122 a˜122 c. Thus, after removing the hard mask patterns 108 a˜108 c, the tops of the field isolation films 112 a′˜112 c′ and the embedded patterns 122 a˜122 c may be leveled almost with the tops of the active patterns 106 a˜106 c.

The first, second, and third gate insulation films, 124 a, 124 b, and 124 c, are selectively formed on the first, second, and third active patterns 106 a, 106 b, and 106 c, respectively. Each of the second gate insulation films 124 c may be made up with a single insulation layer. In this case, the first through third gate insulation films 124 a˜124 c may be formed of silicon oxide, specifically, thermal oxide. The first through third gate insulation films 124 a˜124 c may be also different in thickness by means of selective thermal oxidation.

Otherwise, the second gate insulation film 124 b may include the tunnel insulation film 221, and the upper charge-trapping film 222, and the blocking insulation film 223 those are stacked thereon in sequence. In this case, the procedure is carried out as follows. The second gate insulation film 124 b is deposited all over the substrate 100. After selectively removing the second gate insulation film 124 b from the first and third regions a and b of the substrate 100, the first and third gate insulation films 124 a and 124 c are formed respectively on the first and third active patterns 106 a and 106 c. Here, a process of selective thermal oxidation may be carried out to form the first and third insulation films 124 a and 124 c in different thickness.

A conductive gate film 126 is deposited all over the substrate 100. The conductive gate film 126 may be formed of a single layer with a conductive material such as doped polysilicon, metal (e.g., tungsten or molybdenum), conductive metal nitride (e.g., titanium nitride or tantalum nitride), or metal silicide (e.g., tungsten silicide or cobalt silicide), or a composite of them.

Referring to FIGS. 8A, 8B, and 8C, the conductive gate film 126 of the first region a is patterned to form the first gate electrodes 126 a intersecting the first active patterns 106 a. The conductive gate film 126 of the second region b is patterned to form the second gate electrodes 126 b intersecting the second active patterns 106 b. The conductive gate film 126 of the third region c is patterned to form the third gate electrodes 126 c intersecting the third active patterns 106 c. The first, second, and third gate electrodes, 126 a, 126 b, and 126 c, may be formed at one time.

Subsequently, the first impurity layers 130, the second impurity layers 131 a and 131 b, and the third impurity layers 132 are formed in the first active patterns 106 a at both sides of the first gate electrodes 126 a, the second active patterns 106 b at both sides of the second gate electrodes 126 b, and the third active patterns 106 c at both sides of the third gate electrodes 126 c, respectively. The first, second, and third impurity layers, 130, 131 a and 131 b, and 132, may be formed in sequence or at the same time. Thereby, the semiconductor device shown in FIGS. 1, 2A, 2B, and 2C is completed.

The invention may offer a method of fabricating a volatile memory device in the first region a of the substrate 100, as well as a method of fabricating a nonvolatile memory device in the second region b of the substrate 100.

As stated above, the invention provides the structures capable of disposing such insulation films with various functions between the active patterns and the substrate. Therefore, it is possible to provide volatile memory cells suitable for higher integration and having improved data retention capability, nonvolatile memory cells suitable for higher integration and storing multi-bit data, and/or field effect transistors with higher performance.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims. 

1. A method of fabricating a semiconductor device, the method comprising: forming a sacrificial film and an active layer in sequence on a substrate; successively patterning the active layer, the sacrificial film, and the substrate to form a sacrificial pattern and an active pattern stacked in sequence, and a trench; forming a field isolation film to fill the trench; partially recessing the field isolation film to partially expose the sacrificial pattern; removing the sacrificial pattern by isotropically etching to form an empty region; forming a dielectric film to fill the empty region; forming an embedded pattern to fill the recess region on the dielectric film formed on the bottom and sidewall of the recess region of the field isolation film; forming a gate insulation film and a gate electrode to be stacked in sequence on the active pattern; and forming a pair of impurity layers to locate in the active pattern at both sides of the gate electrode, respectively, the bottoms of the impurity layers contacting with the dielectric film, wherein a channel region between the impurity layers is a data storage field.
 2. The method as set forth in claim 1, wherein the substrate is supplied with a voltage to provide attraction for excessive charges stored in the channel region.
 3. The method as set forth in claim 1, wherein the dielectric film includes an insulation material higher than silicon oxide in dielectric constant. 